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| Type IPD50R520CP CoolMOSTM Power Transistor Package * Lowest figure of merit RON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications Product Summary VDS @Tjmax RDS(on),max Qg,typ 550 0.520 13 V nC PG-TO252 CoolMOS CP is designed for: * Hard- & Softswitching SMPS topologies * DCM PFC for Lamp ballast * PWM for Lamp Ballast, PDP and LCD TV Type IPD50R520CP Package PG-TO252 Marking 5R520P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C T C=25 C I D=2.5 A, V DD=50 V I D=2.5 A, V DD=50 V Value 7,1 4,5 15 166 0,25 2,5 50 20 30 66 -55 ... 150 W C A V/ns V mJ Unit A Rev. 2.0 page 1 2007-11-21 IPD50R520CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 3,8 15 15 V/ns Unit A Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA T sold leaded 1.6 mm (0.063 in.) from case for 10 s 1,9 62 260 C K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Di b kd lt Gate threshold voltage V (BR)DSS V GS=0 V I D=250 A 0 V, 250 V GS(th) V DS=V GS, I D=0.25 mA V DS=500 V, V GS=0 V, T j=25 C V DS=500 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=3.8 A, T j=25 C V GS=10 V, I D=3.8 A, T j=150 C Gate resistance RG f =1 MHz, open drain 500 2,5 3 3,5 V Zero gate voltage drain current I DSS - - 1 A - 10 0,47 100 0,52 nA - 1,2 2,2 Rev. 2.0 page 2 2007-11-21 IPD50R520CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 400 V V DD=400 V, V GS=10 V, I D=3.8 A, R G=48.3 63 35 14 80 17 ns 680 31 29 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=400 V, I D=3.8 A, 00 , 38 , V GS=0 to 10 V - 3 5 13 5,2 17 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=3.8 A, T j=25 C - 0,9 240 1,6 13 1,2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. I SDI D, di /dt 400A/s, V DClink=400V, V peak 5) 6) Rev. 2.0 page 3 2007-11-21 IPD50R520CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 70 102 60 limited by on-state resistance 1 s 50 101 40 10 s Ptot [W] ID [A] 100 s 1 ms 10 ms 30 100 20 DC 10 0 0 25 50 75 100 125 150 175 10-1 100 101 102 103 TC [C] VDS [V] 3 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 20 20 V 10 V 8V 15 0.5 100 7V 0.2 0.1 0.05 0.02 ZthJC [K/W] ID [A] 10 6V 10-1 0.01 single pulse 5.5 V 5 5V 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 tp [s] VDS [V] Rev. 2.0 page 4 2007-11-21 IPD50R520CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 12 20 V 10 V 8V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 2 6.5 V 1,9 10 V 6V 10 7V 1,8 1,7 5.5 V 6V 7V 8 RDS(on) [] 5.5 V 1,6 1,5 1,4 1,3 1,2 ID [A] 6 5V 4 4.5 V 2 0 0 5 10 15 20 25 1,1 0 2 4 6 8 10 12 14 VDS [V] ID [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=3.8 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1,4 1,3 1,2 25 25 C 20 1,1 1 RDS(on) [] 0,9 15 ID [A] 0,8 0,7 0,6 0,5 98 % typ 150 C 10 5 0,4 0,3 0,2 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 Tj [C] VGS [V] Rev. 2.0 page 5 2007-11-21 IPD50R520CP 9 Typ. gate charge V GS=f(Q gate); I D=3.8 A pulsed parameter: V DD 10 9 8 120 V 150 C 25 C, 98% 150 C, 98% 25 C 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 7 400 V 101 6 VGS [V] 5 4 IF [A] 100 10-1 0 5 10 15 0 0,5 1 1,5 2 3 2 1 0 Qgate [nC] VSD [V] 11 Avalanche energy E AS=f(T j); I D=2.5 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 175 580 150 560 125 540 EAS [mJ] 100 VBR(DSS) [V] 25 75 125 175 520 75 500 50 480 25 460 0 440 -60 -20 20 60 100 140 180 Tj [C] Tj [C] Rev. 2.0 page 6 2007-11-21 IPD50R520CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 104 4 103 Ciss 3 Eoss [J] 200 300 400 500 C [pF] 102 Coss 2 101 1 Crss 100 0 100 VDS [V] 0 0 100 200 300 400 500 VDS [V] Rev. 2.0 page 7 2007-11-21 IPD50R520CP Definition of diode switching characteristics Rev. 2.0 page 8 2007-11-21 IPD50R520CP PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK) Rev. 2.0 page 9 2007-11-21 IPD50R520CP Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted i th h i t d dt b i l t d in the human b d or to support and/or maintain and sustain body t t d/ iti d ti and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2007-11-21 |
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